Metal-insulator transition in monolayer MoS2via contactless chemical doping

Metal-insulator transition in monolayer MoS2via contactless chemical doping

Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically altering the layer or compromising its two-dimensionality. Her...

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Bibliographic Details
Main Authors: Busse, C. (Author), Fischer, J. (Author), Jolie, W. (Author), Komsa, H.-P (Author), Michely, T. (Author), Murray, C. (Author), Van Efferen, C. (Author)
Format: Article
Language:English
Published: IOP Publishing Ltd 2022
Subjects:
Chemical doping
Chemical potential
Contact less
contactless doping
Contactless doping
Density functional theory
density-functional theory
Density-functional-theory
Energy gap
Graphene
graphene substrate
Graphene substrates
Layered semiconductors
Metal insulator boundaries
Metal insulator transition
metal-insulator transition
Molybdenum compounds
monolayer MoS2
Monolayer MoS2
Monolayers
Property
Scanning tunneling microscopy
scanning tunneling microscopy/spectroscopy
Scanning tunneling microscopy/spectroscopy
Semiconductor insulator boundaries
Substrates
Transition metal dichalcogenides (TMD)
Transition metals
Twin boundaries
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