Gate Drive Circuit Suitable for a GaN Gate Injection Transistor

A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several studies in the literature have proposed the gate drive circuits with the speed...

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Bibliographic Details
Main Authors: Hattori, F. (Author), Imaoka, J. (Author), Yamamoto, M. (Author), Yanagisawa, Y. (Author)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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