Titanium Dioxide-Based Memristive Thin Film: A Correlation Study between the Experimental Work and Simulation Program with Integrated Circuit Emphasis Hyperbolic Sine Models

Titanium Dioxide-Based Memristive Thin Film: A Correlation Study between the Experimental Work and Simulation Program with Integrated Circuit Emphasis Hyperbolic Sine Models

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This paper presents a correlation study between experimental results of titanium dioxide (TiO2)-based memristors and various hyperbolic sine function models. The current-voltage (I-V) characteristics of sol-gel-derived TiO2 thin film annealed at 250°C were correlated with the reported hyperbolic sin...

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Bibliographic Details
Main Authors: Abdullah, W.F.H (Author), Bakar, R.A (Author), Herman, S.H (Author), Kamarozaman, N.S (Author)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2018
Subjects:
Annealing
C (programming language)
Computational model
Data structures
Electrodes
Hyperbolic functions
Hyperbolic-based model
Integrated circuit modeling
Integrated circuits
IV characteristics
I-V characteristics
memristive device
Memristors
Oxides
Sol-gels
SPICE
Thin film circuits
Thin films
Threshold voltage
Timing circuits
Titanium dioxide
titanium dioxide thin film
Titanium dioxide thin film
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