High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology

High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology

In this letter, we report on the development of high-gain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a nine-stage amplifier circuit are described, which...

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Bibliographic Details
Main Authors: Chartier, S. (Author), John, L. (Author), Leuther, A. (Author), Massler, H. (Author), Merkle, T. (Author), Tessmann, A. (Author)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2022
Subjects:
Amplifier circuits
Amplifiers
Electron mobility
Gain cell
Gate-length
High electron mobility transistors
High electron-mobility transistors
High gain
High-electron-mobility transistor
high-electron-mobility transistor (HEMT)
Ingaas-on-insulator
InGaAs-on-insulator (InGaAs-OI)
Light amplifiers
Semiconducting indium
Semiconducting indium gallium arsenide
silicon
Silicon
Six stages
Substrates
THz
Timing circuits
Transferred substrate
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