High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology

High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology

In this letter, we report on the development of high-gain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a nine-stage amplifier circuit are described, which...

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Bibliographic Details
Main Authors:	Chartier, S. (Author), John, L. (Author), Leuther, A. (Author), Massler, H. (Author), Merkle, T. (Author), Tessmann, A. (Author)
Format:	Article
Language:	English
Published:	Institute of Electrical and Electronics Engineers Inc. 2022
Subjects:	Amplifier circuits Amplifiers Electron mobility Gain cell Gate-length High electron mobility transistors High electron-mobility transistors High gain High-electron-mobility transistor high-electron-mobility transistor (HEMT) Ingaas-on-insulator InGaAs-on-insulator (InGaAs-OI) Light amplifiers Semiconducting indium Semiconducting indium gallium arsenide silicon Silicon Six stages Substrates THz Timing circuits Transferred substrate
Online Access:	View Fulltext in Publisher

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