Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-V dd

Low-power circuits are important for many applications, such as Internet of Things. Device variations and fluctuations are challenging their design. Random telegraph noise (RTN) is an important source of fluctuation. To verify a design by simulation, one needs assessing the impact of fluctuation in...

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Main Authors: Asenov, A. (Author), Gao, R. (Author), Ji, Z. (Author), Kaczer, B. (Author), Manut, A. (Author), Mehedi, M. (Author), Vigar, D. (Author), Zhang, J.F (Author), Zhang, W.D (Author)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2019
Subjects:
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LEADER 02810nam a2200397Ia 4500
001 10.1109-TED.2019.2895700
008 220121s2019 CNT 000 0 und d
020 |a 00189383 (ISSN) 
245 1 0 |a Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-V dd 
260 0 |b Institute of Electrical and Electronics Engineers Inc.  |c 2019 
650 0 4 |a Device fluctuation 
650 0 4 |a Fluctuations 
650 0 4 |a Jitters 
650 0 4 |a Low power electronics 
650 0 4 |a Negative bias temperature instability 
650 0 4 |a Negative-bias temperature instability (NBTI) 
650 0 4 |a Positive charges 
650 0 4 |a Random telegraph noise 
650 0 4 |a Random telegraph noise (RTN) 
650 0 4 |a Telegraph 
650 0 4 |a Threshold voltage 
650 0 4 |a Within-a-device-fluctuation 
650 0 4 |a Yield 
856 |z View Fulltext in Publisher  |u https://doi.org/10.1109/TED.2019.2895700 
856 |z View in Scopus  |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062260875&doi=10.1109%2fTED.2019.2895700&partnerID=40&md5=06254a4dea8397fa464695ad2af93108 
520 3 |a Low-power circuits are important for many applications, such as Internet of Things. Device variations and fluctuations are challenging their design. Random telegraph noise (RTN) is an important source of fluctuation. To verify a design by simulation, one needs assessing the impact of fluctuation in both driving current ΔI d and threshold voltage ΔV th . Many early works, however, only measured RTN-induced ΔI d. ΔV th was not directly measured because of two difficulties: its average value is low and it is highly dynamic. Early works often estimated ΔV th from ΔI d /g m (V g = Vdd ), where g m is the transconductance, without giving its accuracy. The objective of this paper is to develop a new Trigger-When-Charged (TWC) technique for directly measuring the RTN-induced ΔV th . By triggering the measurement only when a trap is charged, measurement accuracy is substantially improved. It is found that there is a poor correlation between ΔI d /g m (V g = V dd ) and the directly measured ΔV th (V g = V th ). The former is twice of the latter on average. The origin for this difference is analyzed. For the first time, the TWC is applied to evaluate device-to-device variations of the directly measured RTN-induced ΔV th without selecting devices. © 2019 IEEE. 
700 1 0 |a Asenov, A.  |e author  
700 1 0 |a Gao, R.  |e author  
700 1 0 |a Ji, Z.  |e author  
700 1 0 |a Kaczer, B.  |e author  
700 1 0 |a Manut, A.  |e author  
700 1 0 |a Mehedi, M.  |e author  
700 1 0 |a Vigar, D.  |e author  
700 1 0 |a Zhang, J.F.  |e author  
700 1 0 |a Zhang, W.D.  |e author  
773 |t IEEE Transactions on Electron Devices  |x 00189383 (ISSN)  |g 66 3, 1482-1488