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Kaczer, B.
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Kaczer, B.
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Kaczer, B.
'
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1
Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-V-dd
by
Asenov, A
,
Gao, R
,
Ji, ZG
,
Kaczer
,
B
,
Manut, A
,
Mehedi, M
,
Vigar, D
,
Zhang, JF
,
Zhang, WD
Published 2019
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2
Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-V dd
by
Asenov, A.
,
Gao, R.
,
Ji, Z.
,
Kaczer
,
B
.
,
Manut, A.
,
Mehedi, M.
,
Vigar, D.
,
Zhang, J.F
,
Zhang, W.D
Published 2019
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3
Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
by
Claes, D.
,
Franco, J.
,
Grasser, T.
,
Grill, A.
,
Kaczer
,
B
.
,
Karl, A.
,
Knobloch, T.
,
Michl, J.
,
Rzepa, G.
,
Schleich, C.
,
Waldhoer, D.
,
Waltl, M.
Published 2023
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Related Subjects
Fluctuations
Random telegraph noise
Telegraph
Bias temperature instability
Bias-temperature instability
Charge trapping
Charge-trapping
Compact model
Compact modeling
Cryogenic modeling
Cryogenics
DEGRADATION
Device fluctuation
Gate-leakage current
Gate-leakage currents
Hysteresis
Jitters
Leakage currents
Low power electronics
MODEL
MOS devices
MOSFETS
Multiphonons
Negative bias temperature instability
Negative-bias temperature instability (NBTI)
Non-radiative
Nonradiative multiphonon theory
Positive charges
Random telegraph noise (RTN)
TO-DEVICE VARIATION
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