Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering
A bottom-gate tungsten-doped InZnSnO (IZTO:W) thin film transistor (TFT) is fabricated. The IZTO:W thin film is deposited by radio-frequency magnetron sputtering at room temperature. The x-ray diffraction result indicates that the film is amorphous. The transmittance spectrum shows that the film is...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AVS Science and Technology Society
2022
|
| Subjects: | |
| Online Access: | View Fulltext in Publisher |