Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering

• Main Authors: Su, J. (Author), Yang, H. (Author), Yang, W. (Author), Zhang, X. (Author)
• Format: Article
• Language: English
• Published: AVS Science and Technology Society 2022
• Subjects: Bias voltage; Bottom gate; C. thin film transistor (TFT); Electrical characteristic; Indium compounds; Magnetron sputtering; Performance; R.F. magnetron sputtering; Radio-frequency-magnetron sputtering; Stress recovery; Thin film circuits; Thin film transistors; Thin films; Thin-films; Threshold voltage; Tin compounds; Transmittance spectra; Visible range; Zinc compounds
• Online Access: View Fulltext in Publisher
• ISBN: 21662746 (ISSN)
• DOI: 10.1116/6.0001702

A bottom-gate tungsten-doped InZnSnO (IZTO:W) thin film transistor (TFT) is fabricated. The IZTO:W thin film is deposited by radio-frequency magnetron sputtering at room temperature. The x-ray diffraction result indicates that the film is amorphous. The transmittance spectrum shows that the film is transparent with an average optical transmittance over 80% in the visible range. The TFT shows excellent performances with a saturation mobility (μSAT) of 41.0 cm2/V s, a threshold voltage (VTH) of 2.4 V, a subthreshold swing of 0.5 V/decade, and a current on/off ratio (ION/IOFF) of 6.8 × 108. The gate bias stress stability and stress recovery of the TFT are investigated. The threshold voltage shifts (ΔVTH) under negative and positive bias stress for 1 h are -9.4 and 10.0 V, respectively. After the stress is removed, ΔVTH under negative and positive stress recovery for 1 h are 7.0 and -3.6 V, respectively. © 2022 Author(s).