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02234nam a2200397Ia 4500 |
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10.1116-6.0001702 |
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220425s2022 CNT 000 0 und d |
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|a 21662746 (ISSN)
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|a Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering
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|b AVS Science and Technology Society
|c 2022
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|z View Fulltext in Publisher
|u https://doi.org/10.1116/6.0001702
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|a A bottom-gate tungsten-doped InZnSnO (IZTO:W) thin film transistor (TFT) is fabricated. The IZTO:W thin film is deposited by radio-frequency magnetron sputtering at room temperature. The x-ray diffraction result indicates that the film is amorphous. The transmittance spectrum shows that the film is transparent with an average optical transmittance over 80% in the visible range. The TFT shows excellent performances with a saturation mobility (μSAT) of 41.0 cm2/V s, a threshold voltage (VTH) of 2.4 V, a subthreshold swing of 0.5 V/decade, and a current on/off ratio (ION/IOFF) of 6.8 × 108. The gate bias stress stability and stress recovery of the TFT are investigated. The threshold voltage shifts (ΔVTH) under negative and positive bias stress for 1 h are -9.4 and 10.0 V, respectively. After the stress is removed, ΔVTH under negative and positive stress recovery for 1 h are 7.0 and -3.6 V, respectively. © 2022 Author(s).
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|a Bias voltage
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|a Bottom gate
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|a C. thin film transistor (TFT)
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|a Electrical characteristic
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|a Indium compounds
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|a Magnetron sputtering
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|a Performance
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|a R.F. magnetron sputtering
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|a Radio-frequency-magnetron sputtering
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|a Stress recovery
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|a Thin film circuits
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|a Thin film transistors
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|a Thin films
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|a Thin-films
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|a Threshold voltage
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|a Tin compounds
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|a Transmittance spectra
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|a Visible range
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|a Zinc compounds
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|a Su, J.
|e author
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|a Yang, H.
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|a Yang, W.
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|a Zhang, X.
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|t Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
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