Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering
A bottom-gate tungsten-doped InZnSnO (IZTO:W) thin film transistor (TFT) is fabricated. The IZTO:W thin film is deposited by radio-frequency magnetron sputtering at room temperature. The x-ray diffraction result indicates that the film is amorphous. The transmittance spectrum shows that the film is...
Main Authors: | Su, J. (Author), Yang, H. (Author), Yang, W. (Author), Zhang, X. (Author) |
---|---|
Format: | Article |
Language: | English |
Published: |
AVS Science and Technology Society
2022
|
Subjects: | |
Online Access: | View Fulltext in Publisher |
Similar Items
-
Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering
by: Su, J., et al.
Published: (2022) -
Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering
by: Ling Dong, et al.
Published: (2019-03-01) -
Characterisation of Silver Deposited Coir Fibers by Magnetron Sputtering
by: Melvi Chandy, et al.
Published: (2015-04-01) -
Deposition and Characterization of Magnetron Sputtered Beta-Tungsten Thin Films
by: Liu, Jiaxing
Published: (2016) -
The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering
by: Mingyu Zhang, et al.
Published: (2021-05-01)