In Situ Transmission Electron Microscopy Study of Shrinkage Kinetics of CH4N-Molecular-Ion-Implantation-Induced Extended Defects

In Situ Transmission Electron Microscopy Study of Shrinkage Kinetics of CH4N-Molecular-Ion-Implantation-Induced Extended Defects

The thermal stability of end-of-range (EOR) defects formed in a CH4N-molecular-ion-implanted epitaxial silicon (Si) wafer was studied by transmission electron microscopy (TEM) observation. By plan-view TEM observation, we found that the density and size of the CH4N-ion-implantation-induced EOR defec...

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Bibliographic Details
Main Authors: Hirose, R. (Author), Kadono, T. (Author), Kobayashi, K. (Author), Koga, Y. (Author), Kurita, K. (Author), Okuyama, R. (Author), Onaka-Masada, A. (Author), Suzuki, A. (Author)
Format: Article
Language:English
Published: Institute of Physics 2022
Subjects:
Activation energy
Desorption
End-of-range defects
Epitaxial silicon
Heat treatment
High resolution transmission electron microscopy
In-situ transmission electron microscopies
Ion implantation
Ion implanted
Ions implantation
Molecular ion implantation
Shrinkage
Shrinkage behavior
Shrinkage kinetics
Shrinkage rates
Silicon wafers
Thermodynamic stability
Transmission electron microscopy observation
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