Electrochemically deposited gallium oxide nanostructures on silicon substrates
We report a synthesis of β-Ga2O3 nanostructures on Si substrate by electrochemical deposition using a mixture of Ga2O3, HCl, NH4OH, and H2O. The presence of Ga3+ ions contributed to the deposition of Ga2O3 nanostructures on the Si surface with the assistance of applied potentials. The morphologies o...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Springer New York LLC
2014
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Subjects: | |
Online Access: | View Fulltext in Publisher View in Scopus |