Recent Progress in Crystal Growth of Bulk GaN
State of the art in crystallization of bulk GaN is reviewed and discussed. Fundamental physical barriers making crystal growth of GaN difficult are indicated. The Na-flux, ammonothermal and halide vapor phase epitaxy methods are presented as the most advanced and promising ones. The high nitrogen pr...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Polska Akademia Nauk
2022
|
| Subjects: | |
| Online Access: | View Fulltext in Publisher |