Unique design approach to realize an O-band laser monolithically integrated on 300mm Si substrate by nano-ridge engineering

Unique design approach to realize an O-band laser monolithically integrated on 300mm Si substrate by nano-ridge engineering

We introduce a newdesign space for optimizing III-Vdevices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows controlling the fundamental lattice constant of the...

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Bibliographic Details
Main Authors: Baryshnikova, M. (Author), Colucci, D. (Author), De Koninck, Y. (Author), Kunert, B. (Author), Langer, R. (Author), Mols, Y. (Author), Muneeb, M. (Author), Pantouvaki, M. (Author), Shi, Y. (Author), Van Campenhout, J. (Author), Van Thourhout, D. (Author), Yudistira, D. (Author)
Format: Article
Language:English
Published: Optica Publishing Group (formerly OSA) 2022
Subjects:
Binary semiconductors
Design approaches
Diverse devices
Gallium alloys
Gallium arsenide
III-V semiconductors
In0.25Ga0.75As
Indium alloys
Indium arsenide
Monolithic integrated circuits
Monolithically integrated
Photonic devices
Pumping (laser)
Quantum-wells
Ridge laser
Semiconducting indium
Semiconducting indium gallium arsenide
Semiconductor alloys
Semiconductor lasers
Si substrates
Silicon photonics
Silicon substrates
Substrates
Ternary alloys
Tunables
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