Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology
This paper presents the effect of shallow trench isolation (STI) on the dark count rate (DCR) and after-pulsing probability (APP) of deep-junction-based single-photon avalanche diodes (SPADs). Two different SPADs were fabricated in 110 nm CMOS image sensor technology, one with STI and the other with...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
NLM (Medline)
2022
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| Online Access: | View Fulltext in Publisher |