Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology
This paper presents the effect of shallow trench isolation (STI) on the dark count rate (DCR) and after-pulsing probability (APP) of deep-junction-based single-photon avalanche diodes (SPADs). Two different SPADs were fabricated in 110 nm CMOS image sensor technology, one with STI and the other with...
Main Authors: | Chae, Y. (Author), Choi, W.-Y (Author), Ha, W.-Y (Author), Lee, M.-J (Author), Park, B. (Author), Park, E. (Author) |
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Format: | Article |
Language: | English |
Published: |
NLM (Medline)
2022
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Online Access: | View Fulltext in Publisher |
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