A fully integrated 5 pF output capacitor, MOS-only reference, 55-nm LDO with optimized area and power for SoC applications

A fully integrated 5 pF output capacitor, MOS-only reference, 55-nm LDO with optimized area and power for SoC applications

A fully integrated output capacitor, MOS-only reference, 55mnm low-dropout regulator (LDO) with optimized area and power is proposed in this letter for system-on-chip (SoC) in self-powered Internet of Things (IoT) applications. The small fully integrated output capacitor saves both area and cost, bu...

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Bibliographic Details
Main Authors: Wu, X. (Author), Yao, Y. (Author), Zhao, M. (Author)
Format: Article
Language:English
Published: Institute of Electronics Information Communication Engineers 2022
Subjects:
Branch-based slay-rate enhancement circuit
branch-based slew-rate enhancement circuit
dynamic attenuation buffer
Dynamic attenuation buffer
Electric current regulators
Fully integrated
fully integrated LDO
Fully integrated low-dropout regulator
Internet of things
Low dropout regulator
Multithreshold
multi-threshold MOS-only reference
Multi-threshold MOS-only reference
optimized area and power
Optimized area and power
Power
Programmable logic controllers
Slew rate enhancement
System stability
System-on-chip
Timing circuits
Transient analysis
Voltage regulators
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