A broadband static frequency divider up to 62 GHz in InP DHBT with capacitive degeneration

A broadband static frequency divider up to 62 GHz in InP DHBT with capacitive degeneration

A broadband static frequency divider fabricated in a 165 GHz ft 0.8 µm InP DHBT process is described. Capacitive degeneration technique is adopted, extending the operating bandwidth with little increase in power consumption and area occupancy. The device characteristics are analyzed to achieve high...

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Bibliographic Details
Main Authors: Cao, S. (Author), Jin, Z. (Author), Su, Y. (Author), Xiao, L. (Author), Zhen, W. (Author)
Format: Article
Language:English
Published: Institute of Electronics Information Communication Engineers 2022
Subjects:
capacitive degeneration
Capacitive degeneration
Device characteristics
Double heterojunction bipolar transistor
double heterojunction bipolar transistor (DHBT)
Double heterojunction bipolar transistors
Dual supply
Heterojunction bipolar transistors
Heterojunctions
III-V semiconductors
Indium phosphide
indium phosphide (InP)
Monolithic microwave integrated circuit
Monolithic microwave integrated circuits
monolithic microwave integrated circuits (MMIC)
Operating bandwidth
Semiconducting indium phosphide
static frequency dividers
Static frequency dividers
Timing circuits
Transistor process
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