A free-space method for complex permittivity measurement of bulk and thin film di-electrics at microwave frequencies

A free-space, non-destructive method for measuring the complex permittivity of a double-layer bulk dielectrics and thin film oxide layers at microwave frequencies have been developed. The method utilizes a spot-focusing antenna system in conjunction with a vector network analyzer in the range of 18-...

Full description

Bibliographic Details
Main Authors: Awang, Z. (Author), Baba, N.H (Author), Bakar, R.A (Author), Zaki, .F.A.M (Author), Zoolfakar, A. (Author)
Format: Article
Language:English
Subjects:
Online Access:View Fulltext in Publisher
View in Scopus
LEADER 02948nam a2200421Ia 4500
001 10.2528-PIERB13031509
008 220112s2013 CNT 000 0 und d
020 |a 19376472 (ISSN) 
245 1 0 |a A free-space method for complex permittivity measurement of bulk and thin film di-electrics at microwave frequencies 
856 |z View Fulltext in Publisher  |u https://doi.org/10.2528/PIERB13031509 
856 |z View in Scopus  |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-84883163092&doi=10.2528%2fPIERB13031509&partnerID=40&md5=a620fecdb6fc3fb48f8e2ebf89179e0a 
520 3 |a A free-space, non-destructive method for measuring the complex permittivity of a double-layer bulk dielectrics and thin film oxide layers at microwave frequencies have been developed. The method utilizes a spot-focusing antenna system in conjunction with a vector network analyzer in the range of 18-26 GHz. The bulk dielectric was measured using the Transmission Method and Metal-Backed Method, while the Metal-Backed Method was used to investigate the thin films. Both types of samples were sandwiched between two quarter-wavelength Te°on plates to improve the mismatch at the frequencies of measurement. The thin film sample arrangement was backed by an additional metal plate. The double-layer bulk dielectric samples were Te°on-PVC and Plexiglas-PVC, while the thin film samples consisted of SiO2 layers of di®erent thicknesses grown on doped and undoped Si wafer substrates. The relative permittivity obtained for PVC ranged between 2.62 to 2.93, while those for Plexiglas exhibited values between 2.45 to 2.63. The relative permittivity of SiO2 deposited on these wafers was between 3.5 to 4.5. All these values are in good agreement with published data. The advantage of the method is its ability to measure the dielectric properties of the films at the mid-frequency band irrespective of the substrate type used. Simulations of the measurement setup were carried out using CST Microwave Studio and the simulation results agreed closely with the measurements. 
650 0 4 |a Complex permittivity 
650 0 4 |a Complex permittivity measurement 
650 0 4 |a CST microwave studio 
650 0 4 |a Dielectric materials 
650 0 4 |a Frequency bands 
650 0 4 |a Metal-backed methods 
650 0 4 |a Microwave frequencies 
650 0 4 |a Nondestructive examination 
650 0 4 |a Nondestructive methods 
650 0 4 |a Permittivity 
650 0 4 |a Plate metal 
650 0 4 |a Polyvinyl chlorides 
650 0 4 |a Relative permittivity 
650 0 4 |a Silica 
650 0 4 |a Silicon wafers 
650 0 4 |a Substrates 
650 0 4 |a Thin films 
650 0 4 |a Transmission methods 
650 0 4 |a Vector network analyzers 
650 0 4 |a Washers 
700 1 0 |a Awang, Z.  |e author 
700 1 0 |a Baba, N.H.  |e author 
700 1 0 |a Bakar, R.A.  |e author 
700 1 0 |a Zaki, .F.A.M.  |e author 
700 1 0 |a Zoolfakar, A.  |e author 
773 |t Progress In Electromagnetics Research B