Negative Photoconductive Effects in Uncooled InAs Nanowire Photodetectors
One-dimensional, direct, and narrow band gap indium arsenide (InAs) nanowires (NWs) have been emerging with great potentials for the next-generation wide-spectrum photodetectors. In this study, metal–semiconductor–metal (MSM) structure InAs NW-based photodetectors were fabricated by transferring MBE...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2021
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |