Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET

A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p-and n-...

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Bibliographic Details
Main Authors: Choi, Y. (Author), Ju, B.-K (Author), Jun, A.H (Author), Kim, S. (Author), Roh, Y. (Author), Seo, H. (Author)
Format: Article
Language:English
Published: MDPI 2022
Subjects:
Online Access:View Fulltext in Publisher