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10.3390-app12083840 |
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|a 20763417 (ISSN)
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|a Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET
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|b MDPI
|c 2022
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|z View Fulltext in Publisher
|u https://doi.org/10.3390/app12083840
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|a A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p-and n-regimes is crucial for applying MoTe2-based devices as electronic devices because their native doping states are unipolar. In this study, a simple method to tune the threshold voltage of MoTe2 field-effect transistors (FETs) was investigated in order to realise an enhancement-mode MoTe2 thin-film transistor by implementing a facile method to modulate the carrier polarity based on the oxidative properties of MoTe2 FETs. Annealing in air induced a continuous p-doping effect in the devices without significant electrical degradation. Through a precise control of the duration and temperature of the post-annealing process, the tailoring technique induces hole doping, which results in a remarkable shift in transfer characteristics, thus leading to a charge neutrality point of the devices at zero gate bias. This study demonstrates the considerable potential of air heating as a reliable and economical post-processing method for precisely modifying the threshold voltage and further controlling the doping states of MoTe2-based FETs for use in logic inverters with 2D semiconductors. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.
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|a charge neutrality
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|a doping
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|a field-effect transistors
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|a MoTe2
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|a threshold voltage
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|a transition metal dichalcogenides
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|a Choi, Y.
|e author
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|a Ju, B.-K.
|e author
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|a Jun, A.H.
|e author
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|a Kim, S.
|e author
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|a Roh, Y.
|e author
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|a Seo, H.
|e author
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|t Applied Sciences (Switzerland)
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