Performance Comparison of Silicon-and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter
Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching losses. This research investigates the power and swit...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |