Synthesis of Ge1-xSnx alloy thin films by rapid thermal annealing of sputtered Ge/Sn/Ge Layers on Si substrates

Synthesis of Ge1-xSnx alloy thin films by rapid thermal annealing of sputtered Ge/Sn/Ge Layers on Si substrates

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In this work, nanocrystalline Ge1-xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400...

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Bibliographic Details
Main Authors: Alrokayan, S. (Author), Hashim, M.R (Author), Khan, H.A (Author), Mahmodi, H. (Author), Rusop, M. (Author), Soga, T. (Author)
Format: Article
Language:English
Published: MDPI AG 2018
Subjects:
Annealing temperatures
Crystalline quality
Film preparation
Ge-Sn
High-resolution x-ray diffraction
Infrared devices
Metal analysis
Metal semiconductor metal photodetector
Multilayers
Nanocrystalline
Nanocrystalline alloys
Nanocrystallines
Nanocrystals
Near infrared region
Optical characteristics
Raman spectroscopy
Rapid thermal annealing
Scanning electron microscopy
Semiconductor alloys
Semiconductor materials
Semiconductor quantum wells
Semiconductors
Si-Ge alloys
Silicon
Silicon substrates
Sputtering
Substrates
Temperature
Thin films
Tin
Tin alloys
X ray diffraction
X ray diffraction analysis
X-ray diffraction
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