The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature-and Pressure-Dependent Study of Polar and Non-Polar Structures

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature-and Pressure-Dependent Study of Polar and Non-Polar Structures

In this paper, we present a comparative analysis of the optical properties of non-polar and polar GaN/AlGaN multi-quantum well (MQW) structures by time-resolved photoluminescence (TRPL) and pressure-dependent studies. The lack of internal electric fields across the non-polar structures results in an...

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Bibliographic Details
Main Authors: Kaminska, A. (Author), Korona, K.P (Author), Koronski, K. (Author), Krukowski, S. (Author), Kryvyi, S. (Author), Monroy, E. (Author), Sobczak, K. (Author), Strak, P. (Author), Wierzbicka, A. (Author)
Format: Article
Language:English
Published: MDPI 2022
Subjects:
electric field
Energy
Gallium nitride
High pressure spectroscopy
high-pressure spectroscopy
Hydrostatic pressure
III-V semiconductors
multi-quantum wells
Multiquantum-well (MQW)
nitrides
Non-polar
Optical properties
Photoluminescence
Piezoelectricity
Polar structures
Pressure dependent
Radiative recombination
S shape
Semiconductor quantum wells
time-resolved photoluminescence
Time-resolved photoluminescence
Well width
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