The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)
The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show singl...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | View Fulltext in Publisher View in Scopus |