A Timing-Based Split-Path Sensing Circuit for STT-MRAM

A Timing-Based Split-Path Sensing Circuit for STT-MRAM

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) applications have received considerable attention as a possible alternative for universal memory applications because they offer a cost advantage comparable to that of a dynamic RAM with fast performance comparable to that of a st...

Full description

Bibliographic Details
Main Authors: Ishdorj, B. (Author), Kim, J. (Author), Kim, J.H (Author), Na, T. (Author)
Format: Article
Language:English
Published: MDPI 2022
Subjects:
dynamic reference voltage
Dynamic reference voltage
Intelligent systems
Magnetic recording
Memory applications
Monte Carlo methods
MRAM devices
read disturbance
Read disturbance
read yield
Read yield
Reference voltages
sense amplifier
Sense amplifier
sensing circuit
Sensing circuits
Spin transfer torque
Spin-transfer torque magnetoresistive random access memory
spin-transfer torque magnetoresistive random access memory (STT-MRAM)
Threshold voltage
Timing circuits
Universal memory
Online Access:View Fulltext in Publisher

Internet

View Fulltext in Publisher

Similar Items