Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and u...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |