Marked Efficiency Improvement of FAPb0.7 Sn0.3 Br3 Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer

Marked Efficiency Improvement of FAPb0.7 Sn0.3 Br3 Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer

Highly luminescent FAPb0.7 Sn0.3 Br3 nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer fo...

Full description

Bibliographic Details
Main Authors: An, H. (Author), Cui, X. (Author), Hu, L. (Author), Li, B. (Author), Qiu, M. (Author), Wang, K. (Author), Wang, N. (Author), Wang, W. (Author), Wang, Z. (Author), Wu, D. (Author), Xiang, B. (Author), Ye, Z. (Author)
Format: Article
Language:English
Published: MDPI 2022
Subjects:
double hole transport structure
FAPb0.7 Sn0.3 Br3 film
light-emitting layer thickness
perovskite light-emitting diode
Online Access:View Fulltext in Publisher

Internet

View Fulltext in Publisher

Similar Items