Marked Efficiency Improvement of FAPb0.7 Sn0.3 Br3 Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer
Highly luminescent FAPb0.7 Sn0.3 Br3 nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer fo...
Main Authors: | , , , , , , , , , , , |
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Format: | Article |
Language: | English |
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MDPI
2022
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Online Access: | View Fulltext in Publisher |
LEADER | 02140nam a2200313Ia 4500 | ||
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001 | 10.3390-nano12091454 | ||
008 | 220510s2022 CNT 000 0 und d | ||
020 | |a 20794991 (ISSN) | ||
245 | 1 | 0 | |a Marked Efficiency Improvement of FAPb0.7 Sn0.3 Br3 Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer |
260 | 0 | |b MDPI |c 2022 | |
856 | |z View Fulltext in Publisher |u https://doi.org/10.3390/nano12091454 | ||
520 | 3 | |a Highly luminescent FAPb0.7 Sn0.3 Br3 nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer for perovskite light-emitting diodes (PeLEDs). Electrical tests indicate that the double hole-transport layers (HTLs) played an important role in improving the electrical-tooptical conversion efficiency of PeLEDs due to their cascade-like level alignment. The PeLED based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB)/poly(9-vinylcarbazole) (PVK) double HTLs produced a high external quantum efficiency (EQE) of 9%, which was improved by approximately 10.9 and 5.14 times when compared with single HTL PVK or the TFB device, respectively. The enhancement of the hole transmission capacity by TFB/PVK double HTLs was confirmed by the hole-only device and was responsible for the dramatic EQE improvement. © 2022 by the authors. Licensee MDPI, Basel, Switzerland. | |
650 | 0 | 4 | |a double hole transport structure |
650 | 0 | 4 | |a FAPb0.7 Sn0.3 Br3 film |
650 | 0 | 4 | |a light-emitting layer thickness |
650 | 0 | 4 | |a perovskite light-emitting diode |
700 | 1 | |a An, H. |e author | |
700 | 1 | |a Cui, X. |e author | |
700 | 1 | |a Hu, L. |e author | |
700 | 1 | |a Li, B. |e author | |
700 | 1 | |a Qiu, M. |e author | |
700 | 1 | |a Wang, K. |e author | |
700 | 1 | |a Wang, N. |e author | |
700 | 1 | |a Wang, W. |e author | |
700 | 1 | |a Wang, Z. |e author | |
700 | 1 | |a Wu, D. |e author | |
700 | 1 | |a Xiang, B. |e author | |
700 | 1 | |a Ye, Z. |e author | |
773 | |t Nanomaterials |