Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications

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The radiation hardness of 180 nm complementary metal–oxide–semiconductor (CMOS) and 55 nm bipolar–CMOS–double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count rate (DCR) levels...

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Bibliographic Details
Main Authors: Charbon, E. (Author), Fenoglio, C.A (Author), Gramuglia, F. (Author), Keshavarzian, P. (Author), Kizilkan, E. (Author), Morimoto, K. (Author), Ripiccini, E. (Author), Wu, M.-L (Author)
Format: Article
Language:English
Published: MDPI 2022
Subjects:
Afterpulsing
Avalanche diodes
CMOS integrated circuits
Complementary metal oxide semiconductors
Dark count rate
Hardness
High-energy physics
Particle beams
Photons
proton irradiation
Proton irradiation
Protons irradiations
radiation damage
Radiation damage
Radiation hardness
Radiation tolerant
radiation-tolerant
Rate increase
Single photon avalanche diode
single-photon avalanche diode
space application
Space applications
SPAD
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