Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications
The radiation hardness of 180 nm complementary metal–oxide–semiconductor (CMOS) and 55 nm bipolar–CMOS–double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count rate (DCR) levels...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI
2022
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Subjects: | |
Online Access: | View Fulltext in Publisher |