Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection

We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode, fabricated on a single-crystal AlN substrate when operating at 5 °C. The threshold current density and device series resistance were reduced by improvements to the epitaxial structure and electrode arrangement. A peak...

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Bibliographic Details
Main Authors: Amano, H. (Author), Aoto, K. (Author), Kushimoto, M. (Author), Sasaoka, C. (Author), Schowalter, L.J (Author), Yoshikawa, A. (Author), Zhang, Z. (Author)
Format: Article
Language:English
Published: IOP Publishing Ltd 2022
Subjects:
AlGaN
AlN substrates
Aluminum gallium nitride
Aluminum nitride
Continuous wave lasing
Current injections
Diodes
Electric resistance
Electrode arrangement
Epitaxial structure
III-V semiconductors
laser diode
Peak wavelength
Semiconductor alloys
Semiconductor lasers
Series resistances
Single crystals
Threshold-current density
ultraviolet
Ultraviolet
Ultraviolet laser diodes
Ultraviolet lasers
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