Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures
Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped quantum well samples by using a pump-probe three-beam technique at 4 K to room temperature. At high pump intensities, an absorptive signal of sub-nanosecond lifetime was detected following a normal p...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2002.
|
| Subjects: | |
| Online Access: | Get fulltext |