Three-dimensional structuring of sapphire by sequential He<sup>+</sup> ion-beam implantation and wet chemical etching
We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 µm and subsequent selective wet chemical etching of the damaged regions by hot H<sub>3</sub>PO<sub>4<...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2003.
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| Subjects: | |
| Online Access: | Get fulltext |