Passively mode-locked diode-pumped surface-emitting semiconductor laser
A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brig...
Main Authors: | , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
2000-09.
|
Subjects: | |
Online Access: | Get fulltext |