Passively mode-locked diode-pumped surface-emitting semiconductor laser

A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brig...

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Bibliographic Details
Main Authors: Hoogland, S. (Author), Dhanjal, S. (Author), Tropper, A.C (Author), Roberts, J.S (Author), Häring, R. (Author), Paschotta, R. (Author), Morier-Genoud, F. (Author), Keller, U. (Author)
Format: Article
Language:English
Published: 2000-09.
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