Characterization of wafer-level thermocompression bonds
Thermocompression bonding joins substrates via a bonding layer. In this paper, silicon substrates were bonded using gold thin films. Experimental data on the effects of bonding pressure (30 to 120 MPa), temperature (260 and 300/spl deg/C), and time (2 to 90 min) on the bond toughness, measured using...
Main Authors: | , , |
---|---|
Format: | Article |
Language: | English |
Published: |
2004.
|
Subjects: | |
Online Access: | Get fulltext |