Characterization of wafer-level thermocompression bonds
Thermocompression bonding joins substrates via a bonding layer. In this paper, silicon substrates were bonded using gold thin films. Experimental data on the effects of bonding pressure (30 to 120 MPa), temperature (260 and 300/spl deg/C), and time (2 to 90 min) on the bond toughness, measured using...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2004.
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| Subjects: | |
| Online Access: | Get fulltext |