Gateable suppression of spin relaxation in semiconductor FETs
The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2001-03.
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| Subjects: | |
| Online Access: | Get fulltext |