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00968 am a22001573u 4500 |
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256694 |
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|a dc
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|a Sandhu, J.S.
|e author
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|a Heberle, A.P.
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|a Baumberg, J.J.
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|a Cleaver, J.R.A.
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|a Gateable suppression of spin relaxation in semiconductor FETs
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|c 2001-03.
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|z Get fulltext
|u https://eprints.soton.ac.uk/256694/1/PRL01_gatedspin.pdf
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|a The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.
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|a Article
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