Comparison of arsenic diffusion in Si<sub>1-x</sub>Ge<sub>x</sub> formed by epitaxy and Ge+ implantation
A comparison is made of arsenic diffusion in Si<sub>0.95</sub>Ge<sub>0.05</sub> produced by epitaxy and ion beam synthesis using a 2 x 10<sup>16 </sup>cm<sup>-2</sup> Ge<sup>+</sup> implant into silicon. The arsenic diffusion depth at 1025...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2003-05.
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| Subjects: | |
| Online Access: | Get fulltext |