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Bonar, J M
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Bonar, J M
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Bonar, J M
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1
Comparison of arsenic diffusion in Si<sub>1-x</sub>Ge<sub>x</sub> formed by epitaxy and Ge+ implantation
by
Mitchell, M J
,
Ashburn, P
,
Bonar
,
J
M
,
Hemment, P L F
Published 2003
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2
Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon
by
Karunaratne, M.S.A
,
Willoughby, A.F
,
Bonar
,
J.M
,
Zhang, J.
,
Ashburn, P.
Published 2005
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3
Study of fluorine behaviour in silicon by selective point defect injection
by
Kham, M.N
,
El Mubarek, H.A.W
,
Bonar
,
J.M
,
Ashburn, P.
Published 2005
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4
Effect of fluorine on boron diffusion under interstitial injection from the surface
by
Kham, M.N
,
El Mubarek, H.A.W
,
Bonar
,
J.M
,
Chivers, D.
,
Ashburn, P.
Published 2006
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5
Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth
by
Pengpad, P.
,
Osman, K.
,
Lloyd, N.S
,
Bonar
,
J.M
,
Ashburn, P.
,
Kemhadjian, H.A
,
Hamel, J.S
,
Bagnall, D.M
Published 2004
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6
Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation
by
El Mubarek, H.A.W
,
Wang, Y.
,
Price, R.
,
Bonar
,
J.M
,
Zhang, J.
,
Hemment, P.L.F
,
Ashburn, P.
Published 2005
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7
Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy
by
Schiz, J.F.W
,
Lamb, Andrew C.
,
Cristiano, Fuccio
,
Bonar
,
J.M
,
Ashburn, Peter
,
Hall, Stephen
,
Hemment, Peter L. F.
Published 2001
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8
110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression
by
Kham, M.N
,
El Mubarek, H.A.W
,
Bonar
,
J.M
,
Ashburn, P.
,
Ward, P.
,
Fiore, L.
,
Petralia, R.
,
Alemanni, C.
,
Messina, A.
Published 2006
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9
Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1-xGex
by
El Mubarek, H.A.W
,
Karunaratne, M.
,
Bonar
,
J.M
,
Dilliway, G.D
,
Wang, Y.
,
Hemment, P.L.F
,
Willoughby, A.F
,
Ashburn, P.
Published 2005
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10
SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers
by
Bain, M.
,
El Mubarek, H.A.W
,
Bonar
,
J.M
,
Wang, Y.
,
Buiu, O.
,
Gamble, H.
,
Armstrong, B.M
,
Hemment, P.L.F
,
Hall, S.
,
Ashburn, P.
Published 2005
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Article
11
Effect of fluorine implantation dose on boron thermal diffusion in silicon
by
El Mubarek, H.A.W
,
Bonar
,
J.M
,
Dilliway, G.D
,
Ashburn, P.
,
Karunaratne, M.
,
Willoughby, A.F
,
Wang, Y.
,
Hemment, P.L.F
,
Price, R.
,
Zhang, J.
,
Ward, P.
Published 2004
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