Design of a 3µm pixel linear CMOS sensor for earth observation
A visible wavelength linear photosensor featuring a pixel size of 3µm has been designed for fabrication using commercial 0.25µm CMOS technology. For the photo-sensing element, the design uses a special "deep N-well" in P-epi diode offered by the foundry for imaging devices. Pixel reset is...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2003-12.
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| Subjects: | |
| Online Access: | Get fulltext |