Design of a 3µm pixel linear CMOS sensor for earth observation

• Main Authors: Morrissey, Q.R (Author), Waltham, N.R (Author), Turchetta, R. (Author), French, M.J (Author), Bagnall, D.M (Author), Al Hashimi, B.M (Author)
• Format: Article
• Language: English
• Published: 2003-12.
• Subjects: Article
• Online Access: Get fulltext

A visible wavelength linear photosensor featuring a pixel size of 3µm has been designed for fabrication using commercial 0.25µm CMOS technology. For the photo-sensing element, the design uses a special "deep N-well" in P-epi diode offered by the foundry for imaging devices. Pixel reset is via an adjacent p-FET, thus allowing high reset voltages for a wide pixel voltage swing. The pixel voltage is buffered using a voltage-follower op-amp and a sampling scheme is used to allow correlated double sampling (CDS) for removal of reset noise. Reset and signal levels are buffered through a 16:1 multiplexer to a switched capacitor amplifier which performs the CDS function. Incorporated in the CDS circuit is a programmable gain of 1-8 for increased signal-to-noise ratio at low signal levels. Data output is via 4 analogue output drivers for off-chip conversion. Each driver supplies a differential output voltage with a ± 1V swing for 6.25kHz. This gives a peak data rate at each output driver of 10M sample/s. The device will operate on a 3.3V supply and will dissipate approximately 950mW. Simulations indicate an equivalent noise charge at the pixel of 66.3e^- for a full well capacity of 255,000e^-, giving a dynamic range of 71.7dB.