High-Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture

High-Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture

Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels compared with identically processed bulk Si MOSFETs. A novel layer structure comprising Si/Si<sub>0.7</sub>Ge<su...

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Bibliographic Details
Main Authors: Olsen, S.H (Author), O'Neill, A.G (Author), Driscoll, L.S (Author), Kwa, K.S.K (Author), Chattopadhyay, S. (Author), Waite, A.M (Author), Tang, Y.T (Author), Evans, A.G.R (Author), Norris, D.J (Author), Cullis, A.G (Author), Paul, D.J (Author), Robbins, D.J (Author)
Format: Article
Language:English
Published: 2003-09.
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