Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices

Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices

The performance of surface channel MOS devices depends on gate oxide interface quality. Carrier transport is enhanced in strained Si, thus its use for MOSFET channels can increase device performance. Thermal oxidation produces the highest quality SiO2. This paper compares thermal oxidation of strain...

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Main Authors: Olsen, S.H (Author), O'Neill, A.G (Author), Norris, D.J (Author), Cullis, A.G (Author), Bull, S.J (Author), Chattopadhyay, S (Author), Kwa, K.S.K (Author), Driscoll, L.S (Author), Waite, A.M (Author), Tang, Y.T (Author), Evans, A.G.R (Author)
Format: Article
Language:English
Published: 2004-06.
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