Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
On-state and off-state performance of strained- Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si-SiGe devices co...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2004-07.
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| Subjects: | |
| Online Access: | Get fulltext |