Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation
In this paper, a study is made of the effect of fluorine implantation on boron transient enhanced diffusion in Si and SiGe by characterising the diffusion of boron marker layers in Si and SiGe in samples with and without a 288 keV, 6x10^13 cm-2 P+ implant and with and without a 185 keV, 2.3x10^15 cm...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2005-01.
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| Subjects: | |
| Online Access: | Get fulltext |