Study of fluorine behaviour in silicon by selective point defect injection
This letter reports a point defect injection study of 185 keV 2.3x1015cm?2 fluorine implanted silicon. After an inert anneal at 1000°C, fluorine peaks are seen at depths of 0.3Rp and Rp and a shoulder between 0.5-0.7Rp. The shallow peak (at 0.3Rp) is significantly smaller under interstitial injectio...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2005-06.
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| Subjects: | |
| Online Access: | Get fulltext |