110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression

110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression

This paper investigates how fluorine implantation can be used to suppress boron diffusion in the base of a double polysilicon silicon bipolar transistor and hence deliver a record fT of 110 GHz. Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy are used to characterize the...

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Main Authors: Kham, M.N (Author), El Mubarek, H.A.W (Author), Bonar, J.M (Author), Ashburn, P. (Author), Ward, P. (Author), Fiore, L. (Author), Petralia, R. (Author), Alemanni, C. (Author), Messina, A. (Author)
Format: Article
Language:English
Published: 2006-03.
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